Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
NVMFS5C
Channel Type:
N
Maximum Gate Threshold Voltage:
2.2V
Maximum Drain Source Resistance:
0.001 Ω
Package Type:
DFN
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
277 A
Transistor Material:
Si
Pin Count:
5
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs:
1mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
100 nC @ 10 V
Vgs(th) (Max) @ Id:
2.2V @ 200µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.8W (Ta), 146W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
7020 pF @ 20 V
Qualification:
AEC-Q101
standardLeadTime:
7 Weeks
Mounting Type:
Surface Mount, Wettable Flank
Grade:
Automotive
Series:
-
Supplier Device Package:
5-DFNW (4.9x5.9) (8-SOFL-WF)
Current - Continuous Drain (Id) @ 25°C:
45A (Ta), 277A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
