N-Channel MOSFET, 20 A, 650 V, 4-Pin PQFN onsemi NTMT190N65S3HF

NTMT190N65S3HF N-Channel MOSFET, 20 A, 650 V, 4-Pin PQFN onsemi
NTMT190N65S3HF
onsemi

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
NTMT190N
Channel Type:
N
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
0.19 Ω
Package Type:
PQFN4 8 x 8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Pin Count:
4
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 430µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-PowerTSFN
Rds On (Max) @ Id, Vgs:
190mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
162W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1610 pF @ 400 V
Mounting Type:
Surface Mount
Series:
SuperFET® III, FRFET®
Supplier Device Package:
4-PQFN (8x8)
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 20 A 650 V 4-Pin PQFN manufactured by onsemi. The manufacturer part number is NTMT190N65S3HF. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product ntmt190n, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.19 ω maximum drain source resistance. The package is a sort of pqfn4 8 x 8. It consists of 1 elements per chip. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 430µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 4-powertsfn. It has a maximum Rds On and voltage of 190mohm @ 10a, 10v. The maximum gate charge and given voltages include 34 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 162w (tc). The product's input capacitance at maximum includes 1610 pf @ 400 v. The product superfet® iii, frfet®, is a highly preferred choice for users. 4-pqfn (8x8) is the supplier device package value. The continuous current drain at 25°C is 20a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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Datasheet - NTMT190N65S3HF(Technical Reference)
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Wafer Fab Change 17/May/2023(PCN Assembly/Origin)
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NTMT190N65S3HF(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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