Dual N-Channel MOSFET Transistor & Diode, 24 A, 150 V, 3-Pin DPAK Infineon IRFR24N15DTRPBF

IRFR24N15DTRPBF Dual N-Channel MOSFET Transistor & Diode, 24 A, 150 V, 3-Pin DPAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
150 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
HEXFET
Channel Type:
N
Maximum Gate Threshold Voltage:
30V
Maximum Drain Source Resistance:
0.095 O
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
24 A
Pin Count:
3
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 24 A 150 V 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRFR24N15DTRPBF. It has a maximum of 150 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 30v of maximum gate threshold voltage. It provides up to 0.095 o maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 2 elements per chip. While 24 a of maximum continuous drain current. It contains 3 pins.

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Datasheet - IRFR24N15DTRPBF(Technical Reference)

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