Dual N-Channel MOSFET Transistor & Diode, 40 A, 40 V, 3-Pin ISOMETRIC Infineon IRF6613TRPBF

IRF6613TRPBF Dual N-Channel MOSFET Transistor & Diode, 40 A, 40 V, 3-Pin ISOMETRIC Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Series:
StrongIRFET
Channel Type:
N
Maximum Gate Threshold Voltage:
20V
Package Type:
DirectFET ISOMETRIC
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
40 A
Maximum Drain Source Resistance:
0.0035 O
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 40 A 40 V 3-Pin ISOMETRIC manufactured by Infineon. The manufacturer part number is IRF6613TRPBF. It has a maximum of 40 v drain source voltage. The product carries enhancement channel mode. The product is available in surface mount configuration. The product strongirfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 20v of maximum gate threshold voltage. The package is a sort of directfet isometric. It consists of 2 elements per chip. While 40 a of maximum continuous drain current. It provides up to 0.0035 o maximum drain source resistance.

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Datasheet - IRF6613TRPBF(Technical Reference)

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You will get a confirmation email regarding your order of Dual N-Channel MOSFET Transistor & Diode, 40 A, 40 V, 3-Pin ISOMETRIC Infineon IRF6613TRPBF. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET Transistor & Diode, 40 A, 40 V, 3-Pin ISOMETRIC Infineon IRF6613TRPBF.
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