Dual N-Channel MOSFET Transistor & Diode, 62 A, 75 V, 3-Pin D2PAK Infineon IRF3007STRLPBF

IRF3007STRLPBF Dual N-Channel MOSFET Transistor & Diode, 62 A, 75 V, 3-Pin D2PAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
75 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
HEXFET
Channel Type:
N
Maximum Gate Threshold Voltage:
20V
Maximum Drain Source Resistance:
0.0126 O
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
62 A
Pin Count:
3
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 62 A 75 V 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRF3007STRLPBF. It has a maximum of 75 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 20v of maximum gate threshold voltage. It provides up to 0.0126 o maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 2 elements per chip. While 62 a of maximum continuous drain current. It contains 3 pins.

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Datasheet - IRF3007STRLPBF(Technical Reference)

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You will get a confirmation email regarding your order of Dual N-Channel MOSFET Transistor & Diode, 62 A, 75 V, 3-Pin D2PAK Infineon IRF3007STRLPBF. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET Transistor & Diode, 62 A, 75 V, 3-Pin D2PAK Infineon IRF3007STRLPBF.
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