Dual N-Channel MOSFET Transistor & Diode, 6.8 A, 650 V, 3-Pin PG-TO 251 Infineon IPS60R1K0CEAKMA1

IPS60R1K0CEAKMA1 Dual N-Channel MOSFET Transistor & Diode, 6.8 A, 650 V, 3-Pin PG-TO 251 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
CoolMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
1 O
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
6.8 A
Pin Count:
3
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 6.8 A 650 V 3-Pin PG-TO 251 manufactured by Infineon. The manufacturer part number is IPS60R1K0CEAKMA1. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 1 o maximum drain source resistance. The package is a sort of ipak (to-251). It consists of 2 elements per chip. While 6.8 a of maximum continuous drain current. It contains 3 pins.

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Datasheet - IPS60R1K0CEAKMA1(Technical Reference)

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