Dual N-Channel MOSFET Transistor & Diode, 30 A, 650 V, 5-Pin ThinPAK 5x6 SMD Infineon IPL60R360P6SATMA1

IPL60R360P6SATMA1 Dual N-Channel MOSFET Transistor & Diode, 30 A, 650 V, 5-Pin ThinPAK 5x6 SMD Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
CoolMOS™ P6
Channel Type:
N
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
0.36 O
Package Type:
ThinPAK 5 x 6
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
30 A
Pin Count:
5
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 30 A 650 V 5-Pin ThinPAK 5x6 SMD manufactured by Infineon. The manufacturer part number is IPL60R360P6SATMA1. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos™ p6, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.36 o maximum drain source resistance. The package is a sort of thinpak 5 x 6. It consists of 1 elements per chip. While 30 a of maximum continuous drain current. It contains 5 pins.

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Datasheet - IPL60R360P6SATMA1(Technical Reference)

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