Dual N-Channel MOSFET Transistor & Diode, 20 A, 100 V, 8-Pin PG-TDSON Infineon IPG20N10S4L35ATMA1

IPG20N10S4L35ATMA1 Dual N-Channel MOSFET Transistor & Diode, 20 A, 100 V, 8-Pin PG-TDSON Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
16V
Maximum Drain Source Resistance:
0.035 O
Package Type:
SuperSO8 5 x 6
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
20 A
Pin Count:
8
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 20 A 100 V 8-Pin PG-TDSON manufactured by Infineon. The manufacturer part number is IPG20N10S4L35ATMA1. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 16v of maximum gate threshold voltage. It provides up to 0.035 o maximum drain source resistance. The package is a sort of superso8 5 x 6. It consists of 2 elements per chip. While 20 a of maximum continuous drain current. It contains 8 pins.

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Datasheet - IPG20N10S4L35ATMA1(Technical Reference)

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