Dual N-Channel MOSFET Transistor & Diode, 83 A, 650 V, 10-Pin PG-HDSOP Infineon IPDD60R080G7XTMA1

IPDD60R080G7XTMA1 Dual N-Channel MOSFET Transistor & Diode, 83 A, 650 V, 10-Pin PG-HDSOP Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
CoolMOS™ G7
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.08 O
Package Type:
DDPAK
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
83 A
Pin Count:
10
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 83 A 650 V 10-Pin PG-HDSOP manufactured by Infineon. The manufacturer part number is IPDD60R080G7XTMA1. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos™ g7, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.08 o maximum drain source resistance. The package is a sort of ddpak. It consists of 2 elements per chip. While 83 a of maximum continuous drain current. It contains 10 pins.

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Datasheet - IPDD60R080G7XTMA1(Technical Reference)

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