Dual N-Channel MOSFET Transistor & Diode, 51 A, 650 V, 3-Pin PG-TO252 Infineon IPD60R170CFD7ATMA1

IPD60R170CFD7ATMA1 Dual N-Channel MOSFET Transistor & Diode, 51 A, 650 V, 3-Pin PG-TO252 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
CoolMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
0.17 O
Package Type:
TO-252
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
51 A
Pin Count:
3
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 51 A 650 V 3-Pin PG-TO252 manufactured by Infineon. The manufacturer part number is IPD60R170CFD7ATMA1. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.17 o maximum drain source resistance. The package is a sort of to-252. It consists of 1 elements per chip. While 51 a of maximum continuous drain current. It contains 3 pins.

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Datasheet - IPD60R170CFD7ATMA1(Technical Reference)

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