Name: IPD30N06S4L23ATMA2, Infineon
Brand: Infineon
SKU: ET21626896
Price: 0.29 GBP
Availability: InStock

IPD30N06S4L23ATMA2 Dual N-Channel MOSFET Transistor & Diode, 30 A, 60 V, 3-Pin PG-TO252 Infineon

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Product Information

Maximum Drain Source Voltage:

60 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

OptiMOS™

Channel Type:

Maximum Gate Threshold Voltage:

16V

Maximum Drain Source Resistance:

0.023 O

Package Type:

TO-252

Number of Elements per Chip:

Maximum Continuous Drain Current:

30 A

Pin Count:

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This is Dual N-Channel MOSFET Transistor & Diode 30 A 60 V 3-Pin PG-TO252 manufactured by Infineon. The manufacturer part number is IPD30N06S4L23ATMA2. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 16v of maximum gate threshold voltage. It provides up to 0.023 o maximum drain source resistance. The package is a sort of to-252. It consists of 1 elements per chip. While 30 a of maximum continuous drain current. It contains 3 pins.

Datasheet - IPD30N06S4L23ATMA2(Technical Reference)

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You can order Infineon brand products with IPD30N06S4L23ATMA2 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

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You will get a confirmation email regarding your order of Dual N-Channel MOSFET Transistor & Diode, 30 A, 60 V, 3-Pin PG-TO252 Infineon IPD30N06S4L23ATMA2. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET Transistor & Diode, 30 A, 60 V, 3-Pin PG-TO252 Infineon IPD30N06S4L23ATMA2.

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Dual N-Channel MOSFET Transistor & Diode, 30 A, 60 V, 3-Pin PG-TO252 Infineon IPD30N06S4L23ATMA2

IPD30N06S4L23ATMA2

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