Dual N-Channel MOSFET Transistor & Diode, 100 A, 40 V, 8-Pin PG-TDSON Infineon IPC100N04S5L1R1ATMA1

IPC100N04S5L1R1ATMA1 Dual N-Channel MOSFET Transistor & Diode, 100 A, 40 V, 8-Pin PG-TDSON Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™ 5
Channel Type:
N
Maximum Gate Threshold Voltage:
20 V, 30V
Maximum Drain Source Resistance:
0.0011 O
Package Type:
SuperSO8 5 x 6
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
100 A
Pin Count:
8
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 100 A 40 V 8-Pin PG-TDSON manufactured by Infineon. The manufacturer part number is IPC100N04S5L1R1ATMA1. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™ 5, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 20 v, 30v of maximum gate threshold voltage. It provides up to 0.0011 o maximum drain source resistance. The package is a sort of superso8 5 x 6. It consists of 2 elements per chip. While 100 a of maximum continuous drain current. It contains 8 pins.

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Datasheet - IPC100N04S5L1R1ATMA1(Technical Reference)

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