Dual N-Channel MOSFET Transistor & Diode, 15 A, 900 V, 3-Pin PG-TO263 Infineon IPB90R340C3ATMA2

IPB90R340C3ATMA2 Dual N-Channel MOSFET Transistor & Diode, 15 A, 900 V, 3-Pin PG-TO263 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
900 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
CoolMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
20 V, 30V
Maximum Drain Source Resistance:
0.34 O
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
15 A
Pin Count:
3
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 15 A 900 V 3-Pin PG-TO263 manufactured by Infineon. The manufacturer part number is IPB90R340C3ATMA2. It has a maximum of 900 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 20 v, 30v of maximum gate threshold voltage. It provides up to 0.34 o maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 15 a of maximum continuous drain current. It contains 3 pins.

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Datasheet - IPB90R340C3ATMA2(Technical Reference)

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