Name: IPB65R190CFDAATMA1, Infineon
Brand: Infineon
SKU: ET21626891
Price: 1.34 GBP
Availability: InStock

IPB65R190CFDAATMA1 Dual N-Channel MOSFET Transistor & Diode, 57.2 A, 650 V PG-TO263 Infineon

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Product Information

Maximum Drain Source Voltage:

650 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

CoolMOS™ P7

Channel Type:

Maximum Gate Threshold Voltage:

4.5V

Maximum Drain Source Resistance:

0.19 O

Package Type:

D2PAK (TO-263)

Number of Elements per Chip:

Maximum Continuous Drain Current:

57.2 A

Pin Count:

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This is Dual N-Channel MOSFET Transistor & Diode 57.2 A 650 V PG-TO263 manufactured by Infineon. The manufacturer part number is IPB65R190CFDAATMA1. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos™ p7, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.19 o maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 57.2 a of maximum continuous drain current. It contains 3 pins.

Datasheet - IPB65R190CFDAATMA1(Technical Reference)

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You can order Infineon brand products with IPB65R190CFDAATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

Yes. Our products in MOSFETs category are shipped in lowest possible time.

You will get a confirmation email regarding your order of Dual N-Channel MOSFET Transistor & Diode, 57.2 A, 650 V PG-TO263 Infineon IPB65R190CFDAATMA1. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET Transistor & Diode, 57.2 A, 650 V PG-TO263 Infineon IPB65R190CFDAATMA1.

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Dual N-Channel MOSFET Transistor & Diode, 57.2 A, 650 V PG-TO263 Infineon IPB65R190CFDAATMA1

IPB65R190CFDAATMA1

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