Name: IPB100N08S2L07ATMA1, Infineon
Brand: Infineon
SKU: ET21626888
Price: 1.16 GBP
Availability: InStock

IPB100N08S2L07ATMA1 Dual N-Channel MOSFET Transistor & Diode, 100 A, 75 V, 3-Pin PG-TO263 Infineon

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Product Information

Maximum Drain Source Voltage:

75 V

Mounting Type:

Through Hole

Channel Mode:

Enhancement

Series:

OptiMOS™

Channel Type:

Maximum Gate Threshold Voltage:

Maximum Drain Source Resistance:

0.00065 O

Package Type:

D2PAK (TO-263)

Number of Elements per Chip:

Maximum Continuous Drain Current:

100 A

Pin Count:

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This is Dual N-Channel MOSFET Transistor & Diode 100 A 75 V 3-Pin PG-TO263 manufactured by Infineon. The manufacturer part number is IPB100N08S2L07ATMA1. It has a maximum of 75 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product optimos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 0.00065 o maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 100 a of maximum continuous drain current. It contains 3 pins.

Datasheet - IPB100N08S2L07ATMA1(Technical Reference)

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You can order Infineon brand products with IPB100N08S2L07ATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

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You will get a confirmation email regarding your order of Dual N-Channel MOSFET Transistor & Diode, 100 A, 75 V, 3-Pin PG-TO263 Infineon IPB100N08S2L07ATMA1. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET Transistor & Diode, 100 A, 75 V, 3-Pin PG-TO263 Infineon IPB100N08S2L07ATMA1.

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Dual N-Channel MOSFET Transistor & Diode, 100 A, 75 V, 3-Pin PG-TO263 Infineon IPB100N08S2L07ATMA1

IPB100N08S2L07ATMA1

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