Name: IPB033N10N5LFATMA1, Infineon
Brand: Infineon
SKU: ET21626885
Price: 2.42 GBP
Availability: InStock

IPB033N10N5LFATMA1 Dual N-Channel MOSFET Transistor & Diode, 170 A, 100 V, 3-Pin PG-TO263 Infineon

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Product Information

Maximum Drain Source Voltage:

100 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

OptiMOS™ 5

Channel Type:

Maximum Gate Threshold Voltage:

4.1V

Maximum Drain Source Resistance:

0.0033 O

Package Type:

D2PAK (TO-263)

Number of Elements per Chip:

Maximum Continuous Drain Current:

170 A

Pin Count:

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This is Dual N-Channel MOSFET Transistor & Diode 170 A 100 V 3-Pin PG-TO263 manufactured by Infineon. The manufacturer part number is IPB033N10N5LFATMA1. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™ 5, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.1v of maximum gate threshold voltage. It provides up to 0.0033 o maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 170 a of maximum continuous drain current. It contains 3 pins.

Datasheet - IPB033N10N5LFATMA1(Technical Reference)

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You can order Infineon brand products with IPB033N10N5LFATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

Yes. Our products in MOSFETs category are shipped in lowest possible time.

You will get a confirmation email regarding your order of Dual N-Channel MOSFET Transistor & Diode, 170 A, 100 V, 3-Pin PG-TO263 Infineon IPB033N10N5LFATMA1. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET Transistor & Diode, 170 A, 100 V, 3-Pin PG-TO263 Infineon IPB033N10N5LFATMA1.

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Dual N-Channel MOSFET Transistor & Diode, 170 A, 100 V, 3-Pin PG-TO263 Infineon IPB033N10N5LFATMA1

IPB033N10N5LFATMA1

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