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This is Dual N-Channel MOSFET Transistor & Diode 120 A 80 V 3-Pin PG-TO263 manufactured by Infineon. The manufacturer part number is IPB031N08N5ATMA1. It has a maximum of 80 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™ 3, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.8v of maximum gate threshold voltage. It provides up to 0.0031 o maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 120 a of maximum continuous drain current. It contains 3 pins.
For more information please check the datasheets.
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