Dual N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin PG-TO263 Infineon IPB015N04NGATMA1

IPB015N04NGATMA1 Dual N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin PG-TO263 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™ 3
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.0015 O
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
12 A
Pin Count:
3
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 12 A 40 V 3-Pin PG-TO263 manufactured by Infineon. The manufacturer part number is IPB015N04NGATMA1. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™ 3, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0015 o maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 12 a of maximum continuous drain current. It contains 3 pins.

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Datasheet - IPB015N04NGATMA1(Technical Reference)

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