Dual N-Channel MOSFET Transistor & Diode, 200 A, 80 V, 8-Pin P/G-HSOF Infineon IAUT200N08S5N023ATMA1

IAUT200N08S5N023ATMA1 Dual N-Channel MOSFET Transistor & Diode, 200 A, 80 V, 8-Pin P/G-HSOF Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
80 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™ 5
Channel Type:
N
Maximum Gate Threshold Voltage:
3.8V
Maximum Drain Source Resistance:
0.0023 O
Package Type:
HSOF-8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
200 A
Pin Count:
8
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 200 A 80 V 8-Pin P/G-HSOF manufactured by Infineon. The manufacturer part number is IAUT200N08S5N023ATMA1. It has a maximum of 80 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™ 5, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.8v of maximum gate threshold voltage. It provides up to 0.0023 o maximum drain source resistance. The package is a sort of hsof-8. It consists of 1 elements per chip. While 200 a of maximum continuous drain current. It contains 8 pins.

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Datasheet - IAUT200N08S5N023ATMA1(Technical Reference)

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