Name: IAUS240N08S5N019ATMA1, Infineon
Brand: Infineon
SKU: ET21626877
Price: 1.21 GBP
Availability: InStock

IAUS240N08S5N019ATMA1 Dual N-Channel MOSFET Transistor & Diode, 240 A, 80 V, 8-Pin PG-HSOG Infineon

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Product Information

Maximum Drain Source Voltage:

80 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

OptiMOS™ 5

Channel Type:

Maximum Gate Threshold Voltage:

3.8V

Maximum Drain Source Resistance:

0.0019 O

Package Type:

PG HSOG-8 (TOLG)

Number of Elements per Chip:

Maximum Continuous Drain Current:

240 A

Pin Count:

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This is Dual N-Channel MOSFET Transistor & Diode 240 A 80 V 8-Pin PG-HSOG manufactured by Infineon. The manufacturer part number is IAUS240N08S5N019ATMA1. It has a maximum of 80 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™ 5, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.8v of maximum gate threshold voltage. It provides up to 0.0019 o maximum drain source resistance. The package is a sort of pg hsog-8 (tolg). It consists of 1 elements per chip. While 240 a of maximum continuous drain current. It contains 8 pins.

Datasheet - IAUS240N08S5N019ATMA1(Technical Reference)

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You will get a confirmation email regarding your order of Dual N-Channel MOSFET Transistor & Diode, 240 A, 80 V, 8-Pin PG-HSOG Infineon IAUS240N08S5N019ATMA1. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET Transistor & Diode, 240 A, 80 V, 8-Pin PG-HSOG Infineon IAUS240N08S5N019ATMA1.

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Dual N-Channel MOSFET Transistor & Diode, 240 A, 80 V, 8-Pin PG-HSOG Infineon IAUS240N08S5N019ATMA1

IAUS240N08S5N019ATMA1

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