Dual N-Channel MOSFET Transistor & Diode, 240 A, 80 V, 8-Pin PG-HSOG Infineon IAUS240N08S5N019ATMA1

IAUS240N08S5N019ATMA1 Dual N-Channel MOSFET Transistor & Diode, 240 A, 80 V, 8-Pin PG-HSOG Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
80 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™ 5
Channel Type:
N
Maximum Gate Threshold Voltage:
3.8V
Maximum Drain Source Resistance:
0.0019 O
Package Type:
PG HSOG-8 (TOLG)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
240 A
Pin Count:
8
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 240 A 80 V 8-Pin PG-HSOG manufactured by Infineon. The manufacturer part number is IAUS240N08S5N019ATMA1. It has a maximum of 80 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™ 5, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.8v of maximum gate threshold voltage. It provides up to 0.0019 o maximum drain source resistance. The package is a sort of pg hsog-8 (tolg). It consists of 1 elements per chip. While 240 a of maximum continuous drain current. It contains 8 pins.

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Datasheet - IAUS240N08S5N019ATMA1(Technical Reference)

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