N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK Infineon IRFS3307ZTRRPBF

IRFS3307ZTRRPBF N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
75 V
Maximum Continuous Drain Current:
128 A
Mounting Type:
Surface Mount
Series:
HEXFET
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.0058 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 128 A 75 V 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRFS3307ZTRRPBF. It has a maximum of 75 v drain source voltage. While 128 a of maximum continuous drain current. The product is available in surface mount configuration. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0058 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - IRFS3307ZTRRPBF(Technical Reference)

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