N-Channel MOSFET, 28 A, 150 V DirectFET(M) Infineon IRF6775MTRPBF

IRF6775MTRPBF N-Channel MOSFET, 28 A, 150 V DirectFET(M) Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
150 V
Maximum Continuous Drain Current:
28 A
Mounting Type:
Surface Mount
Series:
HEXFET
Transistor Material:
Si
Maximum Gate Threshold Voltage:
5V
Package Type:
DirectFET ISOMETRIC
Number of Elements per Chip:
1
Channel Type:
N
Maximum Drain Source Resistance:
0.056 Ω
RoHs Compliant
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This is N-Channel MOSFET 28 A 150 V DirectFET(M) manufactured by Infineon. The manufacturer part number is IRF6775MTRPBF. It has a maximum of 150 v drain source voltage. While 28 a of maximum continuous drain current. The product is available in surface mount configuration. The product hexfet, is a highly preferred choice for users. The transistor is manufactured from highly durable si material. The product carries 5v of maximum gate threshold voltage. The package is a sort of directfet isometric. It consists of 1 elements per chip. The product is available in [Cannel Type] channel. It provides up to 0.056 ω maximum drain source resistance.

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Datasheet - IRF6775MTRPBF(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of N-Channel MOSFET, 28 A, 150 V DirectFET(M) Infineon IRF6775MTRPBF. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 28 A, 150 V DirectFET(M) Infineon IRF6775MTRPBF.
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