N-Channel MOSFET, 3.7 A, 600 V, 3-Pin IPAK Infineon IPU60R2K1CEAKMA1

IPU60R2K1CEAKMA1 N-Channel MOSFET, 3.7 A, 600 V, 3-Pin IPAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
600 V
Maximum Continuous Drain Current:
3.7 A
Mounting Type:
Through Hole
Series:
CoolMOS™ CE
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
2.1 Ω
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 3.7 A 600 V 3-Pin IPAK manufactured by Infineon. The manufacturer part number is IPU60R2K1CEAKMA1. It has a maximum of 600 v drain source voltage. While 3.7 a of maximum continuous drain current. The product is available in through hole configuration. The product coolmos™ ce, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 2.1 ω maximum drain source resistance. The package is a sort of ipak (to-251). It consists of 1 elements per chip. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - IPU60R2K1CEAKMA1(Technical Reference)

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