Name: IPD35N10S3L26ATMA1, Infineon
Brand: Infineon
SKU: ET21617598
Price: 0.50 GBP
Availability: InStock

IPD35N10S3L26ATMA1 N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon

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Product Information

Maximum Drain Source Voltage:

100 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

OptiMOS™-T

Channel Type:

Maximum Gate Threshold Voltage:

2.4V

Maximum Drain Source Resistance:

0.026 Ω

Package Type:

DPAK (TO-252)

Number of Elements per Chip:

Maximum Continuous Drain Current:

35 A

Transistor Material:

Pin Count:

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This is N-Channel MOSFET 35 A 100 V 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD35N10S3L26ATMA1. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™-t, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.4v of maximum gate threshold voltage. It provides up to 0.026 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 35 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

Datasheet - IPD35N10S3L26ATMA1(Technical Reference)

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You can order Infineon brand products with IPD35N10S3L26ATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

Yes. Our products in MOSFETs category are shipped in lowest possible time.

You will get a confirmation email regarding your order of N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD35N10S3L26ATMA1. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD35N10S3L26ATMA1.

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N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD35N10S3L26ATMA1

IPD35N10S3L26ATMA1

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