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N-Channel MOSFET, 73 A, 80 V, 3-Pin DPAK Infineon IPD096N08N3GATMA1

IPD096N08N3GATMA1 N-Channel MOSFET, 73 A, 80 V, 3-Pin DPAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
80 V
Maximum Continuous Drain Current:
73 A
Mounting Type:
Surface Mount
Series:
OptiMOS™ 3
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
0.0096 Ω
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 73 A 80 V 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD096N08N3GATMA1. It has a maximum of 80 v drain source voltage. While 73 a of maximum continuous drain current. The product is available in surface mount configuration. The product optimos™ 3, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 0.0096 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - IPD096N08N3GATMA1(Technical Reference)

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You can order Infineon brand products with IPD096N08N3GATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 73 A, 80 V, 3-Pin DPAK Infineon IPD096N08N3GATMA1. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 73 A, 80 V, 3-Pin DPAK Infineon IPD096N08N3GATMA1.
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