N-Channel MOSFET, 19.3 A, 600 V, 3-Pin TO-220 FullPAK Wide Creepage Infineon IPAW60R280CEXKSA1

Enrgtech Part No: ET21617585
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Manufacturer Part No:
IPAW60R280CEXKSA1
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Manufacturer: Infineon

IPAW60R280CEXKSA1 N-Channel MOSFET, 19.3 A, 600 V, 3-Pin TO-220 FullPAK Wide Creepage Infineon

Product Information

Maximum Drain Source Voltage:

600 V

Maximum Continuous Drain Current:

19.3 A

Mounting Type:

Through Hole

Series:

600V CoolMOS™ CE

Channel Type:

Maximum Gate Threshold Voltage:

3.5V

Maximum Drain Source Resistance:

0.28 Ω

Package Type:

TO-220 FullPAK Wide Creepage

Number of Elements per Chip:

Transistor Material:

Pin Count:

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This is N-Channel MOSFET 19.3 A 600 V 3-Pin TO-220 FullPAK Wide Creepage manufactured by Infineon. The manufacturer part number is IPAW60R280CEXKSA1. It has a maximum of 600 v drain source voltage. While 19.3 a of maximum continuous drain current. The product is available in through hole configuration. The product 600v coolmos™ ce, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 0.28 ω maximum drain source resistance. The package is a sort of to-220 fullpak wide creepage. It consists of 1 elements per chip. The transistor is manufactured from highly durable si material. It contains 3 pins.

Datasheet - IPAW60R280CEXKSA1(Technical Reference)

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N-Channel MOSFET, 19.3 A, 600 V, 3-Pin TO-220 FullPAK Wide Creepage Infineon IPAW60R280CEXKSA1

IPAW60R280CEXKSA1

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