N-Channel MOSFET, 350 mA, 240 V, 4-Pin PG-SOT223 Infineon BSP88H6327XTSA1

BSP88H6327XTSA1 N-Channel MOSFET, 350 mA, 240 V, 4-Pin PG-SOT223 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
240 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
SIPMOS®
Channel Type:
N
Maximum Gate Threshold Voltage:
1.4V
Maximum Drain Source Resistance:
6 Ω
Package Type:
SOT-223
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
350 mA
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 350 mA 240 V 4-Pin PG-SOT223 manufactured by Infineon. The manufacturer part number is BSP88H6327XTSA1. It has a maximum of 240 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product sipmos®, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 1.4v of maximum gate threshold voltage. It provides up to 6 ω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. While 350 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - BSP88H6327XTSA1(Technical Reference)

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