N-Channel MOSFET, 35 A, 200 V, 8-Pin TDSON-8 Infineon BSC350N20NSFDATMA1

BSC350N20NSFDATMA1 N-Channel MOSFET, 35 A, 200 V, 8-Pin TDSON-8 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
200 V
Maximum Continuous Drain Current:
35 A
Mounting Type:
Surface Mount
Series:
OptiMOS™ 3
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.035 Ω
Package Type:
TDSON
Number of Elements per Chip:
1
Transistor Material:
Si
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 35 A 200 V 8-Pin TDSON-8 manufactured by Infineon. The manufacturer part number is BSC350N20NSFDATMA1. It has a maximum of 200 v drain source voltage. While 35 a of maximum continuous drain current. The product is available in surface mount configuration. The product optimos™ 3, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.035 ω maximum drain source resistance. The package is a sort of tdson. It consists of 1 elements per chip. The transistor is manufactured from highly durable si material. It contains 8 pins.

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Datasheet - BSC350N20NSFDATMA1(Technical Reference)

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