N-Channel MOSFET, 119 A, 40 V, 8-Pin TDSON-8 Infineon BSC026N04LSATMA1

BSC026N04LSATMA1 N-Channel MOSFET, 119 A, 40 V, 8-Pin TDSON-8 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Maximum Continuous Drain Current:
119 A
Mounting Type:
Surface Mount
Series:
OptiMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
0.0026 Ω
Package Type:
TDSON
Number of Elements per Chip:
1
Transistor Material:
Si
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 119 A 40 V 8-Pin TDSON-8 manufactured by Infineon. The manufacturer part number is BSC026N04LSATMA1. It has a maximum of 40 v drain source voltage. While 119 a of maximum continuous drain current. The product is available in surface mount configuration. The product optimos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 0.0026 ω maximum drain source resistance. The package is a sort of tdson. It consists of 1 elements per chip. The transistor is manufactured from highly durable si material. It contains 8 pins.

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Datasheet - BSC026N04LSATMA1(Technical Reference)

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