Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 Infineon DF23MR12W1M1B11BPSA1

DF23MR12W1M1B11BPSA1 Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
25 A
Mounting Type:
Screw Mount
Series:
CoolSiC
Channel Type:
N
Maximum Gate Threshold Voltage:
20V
Package Type:
AG-EASY2BM-2
Maximum Drain Source Resistance:
0.066 Ω
RoHs Compliant
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This is Hex N-Channel MOSFET Module 25 A 1200 V AG-EASY2BM-2 manufactured by Infineon. The manufacturer part number is DF23MR12W1M1B11BPSA1. It has a maximum of 1200 v drain source voltage. While 25 a of maximum continuous drain current. The product is available in screw mount configuration. The product coolsic, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 20v of maximum gate threshold voltage. The package is a sort of ag-easy2bm-2. It provides up to 0.066 ω maximum drain source resistance.

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Datasheet - DF23MR12W1M1B11BPSA1(Technical Reference)

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FAQs

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