N-Channel MOSFET, 12.5 A, 80 V PQFN 2 x 2 Infineon IRL80HS120

IRL80HS120 N-Channel MOSFET, 12.5 A, 80 V PQFN 2 x 2 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
80 V
Maximum Continuous Drain Current:
12.5 A
Mounting Type:
Surface Mount
Series:
HEXFET
Channel Type:
N
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
42 mO
Package Type:
DFN2020
Number of Elements per Chip:
1
Pin Count:
6
RoHs Compliant
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This is N-Channel MOSFET 12.5 A 80 V PQFN 2 x 2 manufactured by Infineon. The manufacturer part number is IRL80HS120. It has a maximum of 80 v drain source voltage. While 12.5 a of maximum continuous drain current. The product is available in surface mount configuration. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 42 mo maximum drain source resistance. The package is a sort of dfn2020. It consists of 1 elements per chip. It contains 6 pins.

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Datasheet - IRL80HS120(Technical Reference)

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