N-Channel MOSFET, 100 A, 200 V TO-247 Infineon IRF200P223

IRF200P223 N-Channel MOSFET, 100 A, 200 V TO-247 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
200 V
Maximum Continuous Drain Current:
100 A
Mounting Type:
Through Hole
Series:
HEXFET
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
11.5 mO
Package Type:
TO-247
Number of Elements per Chip:
1
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 100 A 200 V TO-247 manufactured by Infineon. The manufacturer part number is IRF200P223. It has a maximum of 200 v drain source voltage. While 100 a of maximum continuous drain current. The product is available in through hole configuration. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 11.5 mo maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. It contains 3 pins.

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Datasheet - IRF200P223(Technical Reference)

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You will get a confirmation email regarding your order of N-Channel MOSFET, 100 A, 200 V TO-247 Infineon IRF200P223. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 100 A, 200 V TO-247 Infineon IRF200P223.
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