N-Channel MOSFET, 40 A, 40 V PQFN 3.3 x 3.3 Infineon IPZ40N04S58R4ATMA1

IPZ40N04S58R4ATMA1 N-Channel MOSFET, 40 A, 40 V PQFN 3.3 x 3.3 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N
Maximum Gate Threshold Voltage:
3.4V
Maximum Drain Source Resistance:
8.4 mO
Package Type:
PQFN 3 x 3
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
40 A
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 40 A 40 V PQFN 3.3 x 3.3 manufactured by Infineon. The manufacturer part number is IPZ40N04S58R4ATMA1. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The product carries 3.4v of maximum gate threshold voltage. It provides up to 8.4 mo maximum drain source resistance. The package is a sort of pqfn 3 x 3. It consists of 1 elements per chip. While 40 a of maximum continuous drain current. It contains 8 pins.

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Datasheet - IPZ40N04S58R4ATMA1(Technical Reference)

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