N-Channel MOSFET, 2 A, 800 V, 3-Pin DPAK Infineon IPD80R2K7C3AATMA1

IPD80R2K7C3AATMA1 N-Channel MOSFET, 2 A, 800 V, 3-Pin DPAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
800 V
Maximum Continuous Drain Current:
2 A
Mounting Type:
Surface Mount
Channel Type:
N
Maximum Gate Threshold Voltage:
3.9V
Maximum Drain Source Resistance:
2.7 Ohm
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 2 A 800 V 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD80R2K7C3AATMA1. It has a maximum of 800 v drain source voltage. While 2 a of maximum continuous drain current. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. The product carries 3.9v of maximum gate threshold voltage. It provides up to 2.7 ohm maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. It contains 3 pins.

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Datasheet - IPD80R2K7C3AATMA1(Technical Reference)

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