P-Channel MOSFET, 50 A, 40 V DPAK Infineon IPD50P04P413ATMA2

IPD50P04P413ATMA2 P-Channel MOSFET, 50 A, 40 V DPAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
P
Maximum Gate Threshold Voltage:
2.2V
Maximum Drain Source Resistance:
12.6 mO
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
50 A
Pin Count:
3
RoHs Compliant
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This is P-Channel MOSFET 50 A 40 V DPAK manufactured by Infineon. The manufacturer part number is IPD50P04P413ATMA2. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The product carries 2.2v of maximum gate threshold voltage. It provides up to 12.6 mo maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 50 a of maximum continuous drain current. It contains 3 pins.

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Datasheet - IPD50P04P413ATMA2(Technical Reference)

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