N-Channel MOSFET, 70 A, 100 V D2PAK Infineon IPB70N10S312ATMA1

IPB70N10S312ATMA1 N-Channel MOSFET, 70 A, 100 V D2PAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
100 V
Maximum Continuous Drain Current:
70 A
Mounting Type:
Surface Mount
Series:
CoolMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
11.3 mO
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 70 A 100 V D2PAK manufactured by Infineon. The manufacturer part number is IPB70N10S312ATMA1. It has a maximum of 100 v drain source voltage. While 70 a of maximum continuous drain current. The product is available in surface mount configuration. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 11.3 mo maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It contains 3 pins.

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Datasheet - IPB70N10S312ATMA1(Technical Reference)

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