N-Channel MOSFET, 24 A, 650 V, 3-Pin D2PAK Infineon IPB65R095C7ATMA2

IPB65R095C7ATMA2 N-Channel MOSFET, 24 A, 650 V, 3-Pin D2PAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
24 A
Mounting Type:
Surface Mount
Series:
CoolMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
95 mO
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 24 A 650 V 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB65R095C7ATMA2. It has a maximum of 650 v drain source voltage. While 24 a of maximum continuous drain current. The product is available in surface mount configuration. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 95 mo maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It contains 3 pins.

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Datasheet - IPB65R095C7ATMA2(Technical Reference)

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