N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 FullPAK Narrow Lead Infineon IPAN60R650CEXKSA1

IPAN60R650CEXKSA1 N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 FullPAK Narrow Lead Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
600 V
Maximum Continuous Drain Current:
9.9 A
Mounting Type:
Through Hole
Series:
CoolMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
650 mO
Package Type:
TO-220 FP
Number of Elements per Chip:
1
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 9.9 A 600 V 3-Pin TO-220 FullPAK Narrow Lead manufactured by Infineon. The manufacturer part number is IPAN60R650CEXKSA1. It has a maximum of 600 v drain source voltage. While 9.9 a of maximum continuous drain current. The product is available in through hole configuration. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 650 mo maximum drain source resistance. The package is a sort of to-220 fp. It consists of 1 elements per chip. It contains 3 pins.

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Datasheet - IPAN60R650CEXKSA1(Technical Reference)

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