SiC N-Channel MOSFET, 29 A, 650 V, 7-Pin D2PAK ROHM SCT3080AW7TL

SCT3080AW7TL SiC N-Channel MOSFET, 29 A, 650 V, 7-Pin D2PAK ROHM
ROHM

Product Information

Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
29 A
Mounting Type:
Surface Mount
Series:
SCT
Channel Type:
N
Maximum Gate Threshold Voltage:
5.6V
Maximum Drain Source Resistance:
80 mO
Package Type:
TO-263-7
Number of Elements per Chip:
1
Transistor Material:
SiC
Pin Count:
7
RoHs Compliant
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This is SiC N-Channel MOSFET 29 A 650 V 7-Pin D2PAK manufactured by ROHM. The manufacturer part number is SCT3080AW7TL. It has a maximum of 650 v drain source voltage. While 29 a of maximum continuous drain current. The product is available in surface mount configuration. The product sct, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5.6v of maximum gate threshold voltage. It provides up to 80 mo maximum drain source resistance. The package is a sort of to-263-7. It consists of 1 elements per chip. The transistor is manufactured from highly durable sic material. It contains 7 pins.

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Datasheet - SCT3080AW7TL(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of SiC N-Channel MOSFET, 29 A, 650 V, 7-Pin D2PAK ROHM SCT3080AW7TL. You can also check on our website or by contacting our customer support team for further order details on SiC N-Channel MOSFET, 29 A, 650 V, 7-Pin D2PAK ROHM SCT3080AW7TL.
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