N-Channel MOSFET, 19 A, 200 V, 7-Pin DirectFET(M)

IRF6785MTRPBF N-Channel MOSFET, 19 A, 200 V, 7-Pin DirectFET(M)
Infineon

Product Information

Maximum Drain Source Voltage:
200 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
HEXFET
Channel Type:
N
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
0.1 Ω
Package Type:
DirectFET ISOMETRIC
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
19 A
Transistor Material:
Si
Pin Count:
7
RoHs Compliant
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This is N-Channel MOSFET 19 A 200 V 7-Pin DirectFET(M) manufactured by Infineon. The manufacturer part number is IRF6785MTRPBF. It has a maximum of 200 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.1 ω maximum drain source resistance. The package is a sort of directfet isometric. It consists of 1 elements per chip. While 19 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 7 pins.

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Datasheet - IRF6785MTRPBF(Technical Reference)

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