N-Channel MOSFET, 55 A, 80 V, 7-Pin DirectFET(M)

IRF6668TRPBF N-Channel MOSFET, 55 A, 80 V, 7-Pin DirectFET(M)
Infineon

Product Information

Maximum Drain Source Voltage:
80 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
HEXFET
Channel Type:
N
Maximum Gate Threshold Voltage:
4.9V
Maximum Drain Source Resistance:
0.015 Ω
Package Type:
DirectFET ISOMETRIC
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
55 A
Transistor Material:
Si
Pin Count:
7
RoHs Compliant
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This is N-Channel MOSFET 55 A 80 V 7-Pin DirectFET(M) manufactured by Infineon. The manufacturer part number is IRF6668TRPBF. It has a maximum of 80 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.9v of maximum gate threshold voltage. It provides up to 0.015 ω maximum drain source resistance. The package is a sort of directfet isometric. It consists of 1 elements per chip. While 55 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 7 pins.

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Datasheet - IRF6668TRPBF(Technical Reference)

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You will get a confirmation email regarding your order of N-Channel MOSFET, 55 A, 80 V, 7-Pin DirectFET(M). You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 55 A, 80 V, 7-Pin DirectFET(M).
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