N-Channel MOSFET, 6 A, 800 V, 3-Pin DPAK

IPD80R900P7ATMA1 N-Channel MOSFET, 6 A, 800 V, 3-Pin DPAK
Infineon

Product Information

Maximum Drain Source Voltage:
800 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
CoolMOS™ P7
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
0.9 Ω
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 6 A 800 V 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD80R900P7ATMA1. It has a maximum of 800 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos™ p7, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 0.9 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - IPD80R900P7ATMA1(Technical Reference)

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