P-Channel MOSFET, 620 mA, 60 V, 3-Pin SC-59

BSR315PH6327XTSA1 P-Channel MOSFET, 620 mA, 60 V, 3-Pin SC-59
Infineon

Product Information

Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
SIPMOS®
Channel Type:
P
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
0.8 Ω
Package Type:
SC-59
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
620 mA
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is P-Channel MOSFET 620 mA 60 V 3-Pin SC-59 manufactured by Infineon. The manufacturer part number is BSR315PH6327XTSA1. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product sipmos®, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 0.8 ω maximum drain source resistance. The package is a sort of sc-59. It consists of 1 elements per chip. While 620 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - BSR315PH6327XTSA1(Technical Reference)

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