N-Channel MOSFET, 19 A, 300 V, 3-Pin D2PAK

Infineon

Product Information

Maximum Drain Source Voltage:
300 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
HEXFET
Channel Type:
N
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
0.185 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
19 A
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 19 A 300 V 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is AUIRFS6535. It has a maximum of 300 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.185 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 19 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - AUIRFS6535(Technical Reference)

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