N-Channel MOSFET, 19.2 A, 600 V, 5-Pin PG-VSON-4 Infineon IPL60R210P6AUMA1

IPL60R210P6AUMA1 N-Channel MOSFET, 19.2 A, 600 V, 5-Pin PG-VSON-4 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
600 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
CoolMOS™ P6
Channel Type:
N
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
0.21 O
Package Type:
ThinkPAK 8 x 8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
19.2 A
Transistor Material:
Si
Pin Count:
5
RoHs Compliant
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This is N-Channel MOSFET 19.2 A 600 V 5-Pin PG-VSON-4 manufactured by Infineon. The manufacturer part number is IPL60R210P6AUMA1. It has a maximum of 600 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos™ p6, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.21 o maximum drain source resistance. The package is a sort of thinkpak 8 x 8. It consists of 1 elements per chip. While 19.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 5 pins.

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Datasheet - IPL60R210P6AUMA1(Technical Reference)

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