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This is N-Channel MOSFET 80 A 55 V 3-Pin PG-TO263-3-2 manufactured by Infineon. The manufacturer part number is IPB80N06S2L09ATMA2. It has a maximum of 55 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 0.0082 o maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 80 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.
For more information please check the datasheets.
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