N-Channel MOSFET, 120 A, 80 V, 3-Pin PG-TO263-3-2 Infineon IPB120N08S404ATMA1

IPB120N08S404ATMA1 N-Channel MOSFET, 120 A, 80 V, 3-Pin PG-TO263-3-2 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
80 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™ -T2
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.0041 O
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 120 A 80 V 3-Pin PG-TO263-3-2 manufactured by Infineon. The manufacturer part number is IPB120N08S404ATMA1. It has a maximum of 80 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™ -t2, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0041 o maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - IPB120N08S404ATMA1(Technical Reference)

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