P-Channel MOSFET, 39.6 A, 30 V, 8-Pin PG-TSDSON-8 Infineon BSZ180P03NS3GATMA1

BSZ180P03NS3GATMA1 P-Channel MOSFET, 39.6 A, 30 V, 8-Pin PG-TSDSON-8 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS P3
Channel Type:
P
Maximum Gate Threshold Voltage:
3.1V
Maximum Drain Source Resistance:
0.018 O
Package Type:
PQFN 3 x 3
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
39.6 A
Transistor Material:
Si
Pin Count:
8
RoHs Compliant
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This is P-Channel MOSFET 39.6 A 30 V 8-Pin PG-TSDSON-8 manufactured by Infineon. The manufacturer part number is BSZ180P03NS3GATMA1. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos p3, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.1v of maximum gate threshold voltage. It provides up to 0.018 o maximum drain source resistance. The package is a sort of pqfn 3 x 3. It consists of 1 elements per chip. While 39.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.

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Datasheet - BSZ180P03NS3GATMA1(Technical Reference)

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