N-Channel MOSFET, 126 A, 40 V, 8-Pin PG-TSDSON-8 FL Infineon BSZ025N04LSATMA1

BSZ025N04LSATMA1 N-Channel MOSFET, 126 A, 40 V, 8-Pin PG-TSDSON-8 FL Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
0.0025 O
Package Type:
TSDSON-8 FL
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
126 A
Transistor Material:
Si
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 126 A 40 V 8-Pin PG-TSDSON-8 FL manufactured by Infineon. The manufacturer part number is BSZ025N04LSATMA1. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 0.0025 o maximum drain source resistance. The package is a sort of tsdson-8 fl. It consists of 1 elements per chip. While 126 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.

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Datasheet - BSZ025N04LSATMA1(Technical Reference)

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You will get a confirmation email regarding your order of N-Channel MOSFET, 126 A, 40 V, 8-Pin PG-TSDSON-8 FL Infineon BSZ025N04LSATMA1. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 126 A, 40 V, 8-Pin PG-TSDSON-8 FL Infineon BSZ025N04LSATMA1.
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Yes. We ship BSZ025N04LSATMA1 Internationally to many countries around the world.