Dual MOSFET, 40 A, 25 V, 8-Pin PG-TISON-8 Infineon BSC0910NDIATMA1

BSC0910NDIATMA1 Dual MOSFET, 40 A, 25 V, 8-Pin PG-TISON-8 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
25 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
0.0059 O
Package Type:
TISON-8
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Pin Count:
8
RoHs Compliant
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This is Dual MOSFET 40 A 25 V 8-Pin PG-TISON-8 manufactured by Infineon. The manufacturer part number is BSC0910NDIATMA1. It has a maximum of 25 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 0.0059 o maximum drain source resistance. The package is a sort of tison-8. It consists of 2 elements per chip. While 40 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.

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Datasheet - BSC0910NDIATMA1(Technical Reference)

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